ELECTRONICS LETTERS

Intelligent anti-epidemic mask based on KF and ECF fusion algorithm
Xia K, Li X, Li X, Liu Y, Zhang H and Hou R
In response to environmental pollution and the spread of Coronavirus Disease 2019 (COVID-19), this paper proposes a new type of smart mask design, and specifically proposes an optimized double closed-loop control method, especially an improved filtering fusion algorithm. Using the filtering fusion algorithm proposed in this paper, after the Kalman filter (KF) filters the raw data of the attitude sensor, explicit complementary filtering and data fusion are used to obtain the attitude angle of the body. At the same time, the obtained attitude angle is combined with acceleration and blood oxygen concentration to obtain the behaviour characteristic value. On this basis, the speed of the oxygen supply fan captured by the photoelectric sensor is used to form a closed loop with the characteristic value of the behaviour. Finally, the structure of the mask is upgraded and optimized through fluid mechanics simulation, and experiments have verified that the combination of the replaceable filter cloth, the intelligent control system and the ultraviolet disinfection device can effectively protect people's health.
Broadly tunable, low timing jitter, high repetition rate optoelectronic comb generator
Metcalf AJ, Quinlan F, Fortier TM, Diddams SA and Weiner AM
We investigate the low timing jitter properties of a tunable single-pass optoelectronic frequency comb generator. The scheme is flexible in that both the repetition rate and center frequency can be continuously tuned. When operated with 10 GHz comb spacing, the integrated residual pulse-to-pulse timing jitter is 11.35 fs (1 Hz to 10 MHz) with no feedback stabilization. The corresponding phase noise at 1 Hz offset from the photodetected 10 GHz carrier is -100 dBc/Hz.
Avalanche current read-out circuit for low jitter parallel photon timing
Crotti M, Rech I, Gulinatti A and Ghioni M
We propose a novel circuit for single photon avalanche diode (SPAD) current read-out, for photon timing applications. The circuit consists of a single transistor trans-impedance amplifier with a GHz bandwidth: the feedback loop fixes the SPAD anode voltage and allows us to obtain a high time resolution with a very high equivalent current threshold (almost 700 μA). The trans-impedance stage is followed by a low pass filter that reduces the crosstalk of other on-chip detectors and makes the designed structure suitable for multi-detector systems. The discrete components prototype presented in this letter achieves a state-of-art resolution of 34.4 ps FWHM, presents negligible crosstalk between the different pixels and opens the way for the development of an integrated structure with a large number of channels.
Rapidly swept, ultra-widely-tunable 1060 nm MEMS-VCSELs
Jayaraman V, Cole GD, Robertson M, Burgner C, John D, Uddin A and Cable A
Demonstrated are 1060 nm microelectromechanical-systems-based tunable vertical-cavity surface-emitting lasers (MEMS-VCSELs) with a 100 nm continuous tuning range under repetitively scanned operation at rates beyond 500 kHz and a 90 nm continuous tuning range under static operation. These devices employ a thin strained InGaAs multiple quantum well active region integrated with a fully oxidised GaAs/AlO bottom mirror and a suspended dielectric top mirror. The devices are optically pumped via 850 nm light. These ultra-widely tunable lasers represent the first MEMS-VCSELs reported in this wavelength range, and are ideally suited for application in ophthalmic swept-source optical coherence tomography.
High-sweep-rate 1310 nm MEMS-VCSEL with 150 nm continuous tuning range
Jayaraman V, Cole GD, Robertson M, Uddin A and Cable A
Microelectromechanical-systems-based vertical-cavity surface-emitting lasers (MEMS-VCSELs) capable of a 150 nm continuous tuning range near 1310 nm are demonstrated. These devices employ a thin optically pumped active region structure with large free-spectral range, which promotes wide and continuous tuning. To achieve VCSEL emission at 1310 nm, a wide-gain-bandwidth indium phosphide-based multiple quantum well active region is combined with a wide-bandwidth fully oxidised GaAs-based mirror through wafer bonding, with tuning enabled by a suspended dielectric top mirror. These devices are capable of being scanned over the entire tuning range at frequencies up to 500 kHz, making them ideal for applications such as swept source optical coherence tomography and high-speed transient spectroscopy.
Power voltage current convertor using quasi complementary MOSFET current mirrors
Maclachlan RA and Riviere CN
A voltage current convertor is described having a quasi complementary class AB architecture that is particularly suited to implementation using discrete power MOSFETs. High-voltage mirror designs are presented, enabling the construction of sources with kilovolt compliance range, tens of watts of output power and greater than 100 kHz bandwidth. GΩ output impedance and distortion below 1% can be obtained with no trimming or transistor matching.
Common path optical coherence tomography with fibre bundle probe
Han JH, Liu X, Song CG and Kang JU
A simple common path optical coherence tomography using a fibre optic bundle as a probe is demonstrated experimentally. The mechanical lateral scans are accomplished outside the specimen, proximal entrance of the fibre bundle, which eliminated the need for moving parts in the distal end of the probe. This feature allows the probe to be made submillimetre in size and easily integrated into surgical tools for intraoperative imaging. The axial and lateral resolutions of the system, and preliminary images of phantom samples, are reported.